Fujitsu Series 3 Manual
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5. Endianness and Valid Byte Lanes Example: When a byte access is performed to a 16-bit wide target, only 2 bytes are valid according to endianness shown in the above table. Data in the internal bus is assigned to 16 bits according to endianness, and input or output. 31 0 23 15 7 Unused Little endian HADDR[1]=0 310 23 15 7 H*DATA External I/O MDATA HADDR[1]=1 HADDR: AHB address input As shown in the above figure, only HADDR[1] is involved in data assignment. This is also the case with during a half word access. During a word access, the external bus interface generates addresses automatically, and executes accesse s twice corresponding to the HADDR [1] value. The dual access is a serial access in which the address changes while the chip select signal is LOW. FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1295 MB9Axxx/MB9Bxxx Series
5. Endianness and Valid Byte Lanes The following figure shows a correlation between internal data and ex ternal I/O when the 8-bit wide target is accessed. Only a single byte is valid according to endianness. 31 Unused HADDR[1:0]= 10 HADDR[1:0]=01HADDR[1:0]=11 HADDR[1:0]=00 23 15 70 31 23 15 70 Internal bus data H*DATA External I/O MDATA Little endian For an 8-bit target, the HADDR[1:0] value determines the I/O data. When a word or half word access is performed, the ex ternal bus interface automatically generates addresses, and operates at least a single access. This app lies to every type of access independent of settings. FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1296 MB9Axxx/MB9Bxxx Series
6. Connection Examples 6. Connection Examples This section provides an example of connections with external devices. 8-bit SRAM Figure 6-1 shows an example of connecting an 8-bit SRAM. Figure 6-1 Example 8-bit SRAM connection This LSI x8 SRAM MAD [24:0] MCSX [0] MOEX MWEX MDATA [7:0] Adr CS OE WE DQ [7:0] 8-bit SRAM 2 Figure 6-2 shows an example of connecting two 8-bit SRAMs. Figure 6-2 Example dual 8-bit SRAMx2 connection This LSI x8 SRAM x8 SRAM MDATA [7:0] MDATA [15:8] MAD [24:1] MCSX [0] MDQM [0] MDQM [1] A CS OE WE DQ [7:0] A CS OE WE DQ [7:0] MOEX MDQM [1:0] MDATA [15:0] FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1297 MB9Axxx/MB9Bxxx Series
6. Connection Examples 16-bit SRAM Figure 6-3 shows an example of connecting a 16-bit SRAM. Figure 6-3 Example 16-bit SRAM connection This LSI X16 SRAM MAD [24:1] MCSX [0] MOEX MWEX MDQM [1:0] MDATA [15:0] A CS OE WE DQM [1:0] DQ [15:0] 8-bit NAND Figure 6-4 shows an example of connecting an 8-bit NAND flash memory. Figure 6-4 Example 8-bit NAND flash memory connection This LSI x8 NAND MAD [24:0] MCSX [0] MNCLE MNALE MNREX MNWEX MDATA [7:0] A CS CLE ALE RE WE DQ [7:0] FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1298 MB9Axxx/MB9Bxxx Series
7. Registers 7. Registers This section explains the configuration and functions of registers used for the external bus interface. The following explains the registers used for the external bus interface. The bit width of every register is 32. Each register can be accessed by the APB interface w ith 32-bit width (word). Write 0 to reserved areas. A rewritten register value is not immediately applied to the operation. When you rewrite a register value during access to an external memory, the value is act ually rewritten and reflected on the operation after the accessing process of the external memo ry is finished and then a time period of a few PCLK cycles passes. Read the register value to check that the rewriting has actually been applied to the operation. Ta b l e 7 - 1 lists the registers. Table 7-1 Register list Abbreviation Register name See MODE0 to MODE7 Mode Register 0 to Mode Register 7 7.1 TIM0 to TIM7 Timing Register 0 to Timing Register 7 7.2 AREA0 to AREA7 Area Register 0 to Area Register 7 7.3 FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1299 MB9Axxx/MB9Bxxx Series
7. Registers 7.1. Mode Register 0 to Mode Register 7 The following shows the configuration of the Mode Register (0 to 7). bit 31 30 29 28 27 26 25242322 21 20 19 18 17 16 Field Reserved Attribute - Initial value - bit 15 14 13 12 11 10 9 876 5 4 3 2 1 0 Field Reserved TESTPAGENAND WEOFF RBMON WDTH Attribute - R/WR/W Initial value - 0 0 0 0 0 0*1 [bit 6] TEST Always set this bit to 0. It must not be set to 1. The read value is 0. [bit 5] PAGE (PAGE access mode): NOR flash memory page access mode This bit controls the mode of NOR flash memory page access. In NOR flash memory page access mode, the first read access cycle (FRADC) setting can generate the first address cycle. Subsequently, the read access cycle (RACC) setting can continue the access until it reaches the 16-byte boundary. When you select NOR flash memory page access mode, set the RBMON bit to 0 and the read access cycle (RADC) to 0. Bit Description 0 NOR flash memory page access mode is turned OFF (Initial value) 1 NOR flash memory page access mode is turned ON [bit 4] NAND: NAND flash memory mode This bit controls the mode used to connect with a NAND flash memory. To enable the access to a NAND flash memory, set this bit to 1. In NAND flash memory mode, the corresponding MCSX is fixed to LOW and, subsequently, the pin dedicated to the NAND flash memory is used during the access. If this bit is set to 0 while the NAND flash memory is unused, then MCSX is fixed to HIGH, enabling the NAND flash memory to maintain a low power consumption state. Bit Description 0 NAND flash memory page mode is turned OFF (Initial value) 1 NAND flash memory mode is turned ON FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1300 MB9Axxx/MB9Bxxx Series
7. Registers [bit 3] WEOFF (WEX OFF): Write Enable OFF This bit can disable the write enable signal (MWEX) operation. When the byte mask signal (MDQM) is used as a de vice write enable signal, disabling unnecessary MWEX operation can reduce current consumption. When this bit is set to disable, MWEX is fixed to HIGH. Bit Description 0 Enable [Initial value] 1 Disable [bit 2] RBMON: Read Byte Mask ON This bit can enable the byte mask signal (MDQM) for read access. The setting controls the output of u nnecessary data from a device for whic h the byte mask signal is enabled. This is helpful to reduce power consumption. Bit Description 0 Disable [Initial value] 1 Enable [bit 1:0] WDTH: Data Width These bits specify the data bit width of a device to be connected. Bit 1 Bit 0 Description 0 0 8 bits [Initial value] 0 1 16 bits 1 0 Setting disabled 1 1 Setting disabled If you write a disabled value to a TEST or WDTH bit, operation of the exte rnal bus int erface is not guaranteed. FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1301 MB9Axxx/MB9Bxxx Series
7. Registers 7.2. Timing Register 0 to Timing Register 7 The following shows the configuration of the Timing Register (0 to 7). bit 31 30 29 28 27 2625242322212019 18 17 16 Field WIDLC WWEC WADC WACC Attribute R/W Initial value 0000 0101 0101 1111 bit 15 14 13 12 11 109 8 7 6 5 4 3 2 1 0 Field RIDLC FRADC RADC RACC Attribute R/W Initial value 1111 0000 0000 1111 [bit 31:28] WIDLC: Write Idle Cycle These bits set the number of idle cycles after write access. Bit 31 Bit 30 Bit 29 Bit 28 Description 0 0 0 0 1 cycle [Initial value] ... ... 1 1 1 1 16 cycles [bit 27:24] WWEC: Write Enable Cycle These bits set the number of assert cycles of write enable. The setting of these bits affects the byte mask signal (MDQM). Bit 27 Bit 26 Bit 25 Bit 24 Description 0 0 0 0 1 cycle ... ... 0 1 0 1 6 cycles [Initial value] ... ... 1 1 1 0 15 cycles 1 1 1 1 Setting disabled FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1302 MB9Axxx/MB9Bxxx Series
7. Registers [bit 23:20] WADC: Write Address Setup cycle These bits set the number of setup cycles of write address. The address is output during the cycle set by these bits, but a write enable signal is not asserted until the set cycle starts. Bit 23 Bit 22 Bit 21 Bit 20 Description 0 0 0 0 1 cycle ... ... 0 1 0 1 6 cycles [Initial value] ... ... 1 1 1 0 15 cycles 1 1 1 1 Setting disabled [bit 19:16] WACC: Write Access Cycle These bits set the number of cycles required for write access. The address remains unchanged duri ng the cycle set by these bits. The number of cycles set by these bits must be equa l to or more than the sum of the address setup cycle (WADC) and the write enable cycle (WWEC). Bit 19 Bit 18 Bit 17 Bit 16 Description 0 0 0 0 Setting disabled 0 0 0 1 Setting disabled 0 0 1 0 3 cycles ... ... 1 1 1 1 16 cycles [Initial value] [bit 15:12] RIDLC: Read Idle Cycle These bits set the number of idle cycles after read access. They are used to avoid data collision caused by a write access occurring immediately after a read access. Bit 15 Bit 14 Bit 13 Bit 12 Description 0 0 0 0 1 cycle ... ... 1 1 1 1 16 cycles [Initial value] FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1303 MB9Axxx/MB9Bxxx Series
7. Registers [bit 11:8] FRADC: First Read Address Cycle These bits exclusively set a NOR flash memory that supports page mode access. They set the initial wait time of the address during read access to flash memory. The address for the set cycle is retained only during the first cycle. After the first access, the access is performed according to the numb er of cycles set by RACC. In page mode access, MCSX and MOEX are asserted simultaneously. If values other than 0 is set to these bits , set the read access setup cycle (RADC) to 0. Bit 11 Bit 10 Bit 9 Bit 8 Description 0 0 0 0 0 cycles [Initial value] ... ... 1 1 1 1 15 cycles [bit 7:4] RADC: Read Address Setup cycle These bits set the number of se tup cycles of read address. Within the read address setup cycle, MCSX and address are asserted but MOEX is not asserted. If 0 is set to any of these bits, MOEX an d MCSX are always asserted. The set value must be less than the numb er of read access cycles. (RADC < RACC). When using NOR flash memory page acces s mode, set these bits to 0b0000. If the access size is more than the target width, or if a device such as NAND flash memory needs to switch HIGH and LOW of read enable (MOEX or MNREX), set these bits to 0b0001 or a higher value. Bit 7 Bit 6Bit 5 Bit 4 Description 0 0 0 0 0 cycles [Initial value] ... ... 1 1 1 1 15 cycles [bit 3:0] RACC: Read Access Cycle These bits set the number of cycles required for read access. The address remains unchanged during th e cycle specified by these bits, and the data is captured at the last cycle. Bit 3 Bit 2Bit 1 Bit 0 Description 0 0 0 0 1 cycle ... ... 1 1 1 1 16 cycles [Initial value] FUJITSU SEMICONDUCTOR LIMITED CHAPTER 23: External Bus Interface MN706-00002-1v0-E 1304 MB9Axxx/MB9Bxxx Series